Renesas Electronics - HVD355BSFP

MV2101G by Onsemi is a varactor diode with a min quality factor of 450, ideal for high frequency to ultra high frequency applications. It has a nominal capacitance of 6.8 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems. The diode's abrupt variable capacitance classification and through-hole terminal form offer precise control over capacitance ratios in electronic designs.

BB119-AMMOPAK by NXP Semiconductors is a variable capacitance diode ideal for RF applications. It features a max reverse current of 2 µA, operates up to 200 °C, and has a reverse test voltage of 15 V. Its isolated case connection ensures reliable performance in various circuits.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Diode Element Material: SILICON;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 30 V; Nominal Diode Capacitance: 19.25 pF;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .225 pF; Maximum Repetitive Peak Reverse Voltage: 6 V; Minimum Quality Factor: 20;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BB909A-AMMOPAK by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.01 µA, operates up to 100 °C, and has a breakdown voltage of 32 V. Ideal for tuning circuits and RF applications.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 52 pF; Minimum Quality Factor: 200; Maximum Repetitive Peak Reverse Voltage: 16 V;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

The NXP 934042930135 is a variable capacitance diode ideal for RF tuning applications. It features a max reverse current of 0.01 µA, operates b/w -55 °C to 125 °C, and has a breakdown voltage of 10 V. Its compact surface mount design ensures efficient space utilization in circuits.

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 18.22 pF; Maximum Repetitive Peak Reverse Voltage: 35 V; JESD-609 Code: e3; Terminal Finish: TIN;

1N5446 by Onsemi is a Varactor Diode with a Min Quality Factor of 350, Max Reverse Current of 0.02 uA, and Nominal Diode Capacitance of 18 pF. It is used in applications requiring variable capacitance diodes for tuning circuits in electronic devices.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MMBV109LT1G by Onsemi is a varactor diode with a min quality factor of 200, nominal capacitance of 29 pF, and breakdown voltage of 30 V. It is ideal for very high frequency applications due to its hyperabrupt variable capacitance diode classification and small outline package style.

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;