Image shown is a representation only.
| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | IDT6116LA120DB |
| Description | STANDARD SRAM; Temperature Grade: MILITARY; No. of Terminals: 24; Package Code: DIP; Package Shape: RECTANGULAR; Maximum Standby Current: .0002 Amp; |
| Datasheet | IDT6116LA120DB Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | CERAMIC, GLASS-SEALED |
| Maximum Standby Current: | .0002 Amp |
| Organization: | 2KX8 |
| Output Characteristics: | 3-STATE |
| Maximum Time At Peak Reflow Temperature (s): | 20 |
| Maximum Seated Height: | 4.826 mm |
| Minimum Supply Voltage (Vsup): | 4.5 V |
| Sub-Category: | SRAMs |
| Surface Mount: | NO |
| Maximum Supply Current: | 85 mA |
| Terminal Finish: | Tin/Lead (Sn/Pb) |
| No. of Terminals: | 24 |
| No. of Words: | 2048 words |
| Terminal Position: | DUAL |
| Package Style (Meter): | IN-LINE |
| Screening Level: | MIL-STD-883 Class B |
| Technology: | CMOS |
| JESD-30 Code: | R-GDIP-T24 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ASYNCHRONOUS |
| Maximum Operating Temperature: | 125 Cel |
| Package Code: | DIP |
| Width: | 15.24 mm |
| Input/Output Type: | COMMON |
| No. of Ports: | 1 |
| Memory Density: | 16384 bit |
| Minimum Standby Voltage: | 2 V |
| Memory IC Type: | STANDARD SRAM |
| JESD-609 Code: | e0 |
| Minimum Operating Temperature: | -55 Cel |
| Memory Width: | 8 |
| Output Enable: | YES |
| No. of Functions: | 1 |
| Qualification: | Not Qualified |
| Package Equivalence Code: | DIP24,.6 |
| Length: | 32.004 mm |
| Maximum Access Time: | 120 ns |
| No. of Words Code: | 2K |
| Nominal Supply Voltage / Vsup (V): | 5 |
| Peak Reflow Temperature (C): | 225 |
| Parallel or Serial: | PARALLEL |
| Terminal Pitch: | 2.54 mm |
| Temperature Grade: | MILITARY |
| Maximum Supply Voltage (Vsup): | 5.5 V |
| Power Supplies (V): | 5 |
