IDT7M1003S30CB by Renesas Electronics | Memory ICs

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	IDT7M1003S30CB
Description	MULTI-PORT SRAM MODULE; Temperature Grade: MILITARY; No. of Terminals: 64; Package Code: DIP; Package Shape: RECTANGULAR; Technology: CMOS;
Datasheet	IDT7M1003S30CB Datasheet

NAME	DESCRIPTION
Package Body Material:	CERAMIC
Maximum Standby Current:	.125 Amp
Organization:	64KX8
Output Characteristics:	3-STATE
Sub-Category:	SRAMs
Surface Mount:	NO
Maximum Supply Current:	790 mA
Terminal Finish:	TIN LEAD
No. of Terminals:	64
No. of Words:	65536 words
Terminal Position:	DUAL
Package Style (Meter):	IN-LINE
Screening Level:	MIL-STD-883 Class B (Modified)
Technology:	CMOS
JESD-30 Code:	R-XDIP-T64
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ASYNCHRONOUS
Maximum Operating Temperature:	125 Cel
Package Code:	DIP
Input/Output Type:	COMMON
No. of Ports:	2
Memory Density:	524288 bit
Minimum Standby Voltage:	4.5 V
Memory IC Type:	MULTI-PORT SRAM MODULE
JESD-609 Code:	e0
Minimum Operating Temperature:	-55 Cel
Memory Width:	8
Qualification:	Not Qualified
Package Equivalence Code:	DIP64,.6
Maximum Access Time:	30 ns
No. of Words Code:	64K
Parallel or Serial:	PARALLEL
Terminal Pitch:	2.54 mm
Temperature Grade:	MILITARY

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