IDT7M1011S25GB by Renesas Electronics | Memory ICs

Image shown is a representation only.

Manufacturer	Renesas Electronics
Manufacturer's Part Number	IDT7M1011S25GB
Description	MULTI-PORT SRAM MODULE; Temperature Grade: MILITARY; No. of Terminals: 121; Package Code: PGA; JESD-609 Code: e0; Power Supplies (V): 5;
Datasheet	IDT7M1011S25GB Datasheet

NAME	DESCRIPTION
Package Body Material:	CERAMIC
Maximum Standby Current:	.12 Amp
Organization:	1KX36
Output Characteristics:	3-STATE
Sub-Category:	SRAMs
Surface Mount:	NO
Maximum Supply Current:	1240 mA
Terminal Finish:	TIN LEAD
No. of Terminals:	121
No. of Words:	1024 words
Terminal Position:	PERPENDICULAR
Package Style (Meter):	GRID ARRAY
Screening Level:	MIL-STD-883 Class B (Modified)
Technology:	CMOS
Terminal Form:	PIN/PEG
Operating Mode:	ASYNCHRONOUS
Maximum Operating Temperature:	125 Cel
Package Code:	PGA
Input/Output Type:	COMMON
No. of Ports:	2
Memory Density:	36864 bit
Minimum Standby Voltage:	4.5 V
Memory IC Type:	MULTI-PORT SRAM MODULE
JESD-609 Code:	e0
Minimum Operating Temperature:	-55 Cel
Memory Width:	36
Qualification:	Not Qualified
Package Equivalence Code:	PGA121(UNSPEC)
Maximum Access Time:	25 ns
No. of Words Code:	1K
Nominal Supply Voltage / Vsup (V):	5
Parallel or Serial:	PARALLEL
Temperature Grade:	MILITARY
Power Supplies (V):	5

Popular Products

Vishay Intertechnology's SMBJ18CA is a bidirectional TRANS VOLTAGE SUPPRESSOR DIODE with a max clamping voltage of 29.2 V and a breakdown voltage of 21.05 V. It is surface mountable and commonly used in transient suppression applications.

TCA6424ARGJR by Texas Instruments is a CMOS parallel I/O port with 24 bits and 3 ports. It operates b/w -40 to 85°C, suitable for industrial applications. With a max clock frequency of 0.4 MHz, it offers low power consumption at only 0.03 mA supply current.

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

ECA2DHG4R7 by Panasonic is a 4.7uF aluminum electrolytic capacitor with 200V rated DC voltage. It features tan delta of 0.15, leakage current of 0.0664mA, and ripple current of 50mA, making it ideal for applications requiring high capacitance stability and low leakage in through-hole mounting setups at temperatures ranging from -25 to 105°C.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified;

FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MBRM140T1G by Onsemi is a Schottky rectifier diode with 40V max repetitive peak reverse voltage, 1A max output current, and 0.3V max forward voltage. It is used in applications requiring small outline surface mount diodes for efficient power management.

SZNUP2105LT1G by Onsemi is a Transient Suppression Device with 2 elements in a common anode configuration. It has a max non-repetitive peak reverse power dissipation of 350W and breakdown voltage of 29.1V. Ideal for applications requiring bidirectional polarity protection, such as automotive electronics and industrial equipment due to its AEC-Q101 compliance and high clamping voltage of 44V.