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Manufacturer | Renesas Electronics |
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Manufacturer's Part Number | ISL73024SEHMX |
Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 125 Cel; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY; |
Datasheet | ISL73024SEHMX Datasheet |
NAME | DESCRIPTION |
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Package Body Material: | UNSPECIFIED |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SINGLE |
Transistor Element Material: | GALLIUM NITRIDE |
Field Effect Transistor Technology: | HIGH ELECTRON MOBILITY |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 7.5 A |
Surface Mount: | YES |
No. of Terminals: | 7 |
Terminal Position: | BOTTOM |
Package Style (Meter): | CHIP CARRIER |
JESD-30 Code: | R-XBCC-N7 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | NO LEAD |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 125 Cel |
Case Connection: | DRAIN SOURCE |
Maximum Drain-Source On Resistance: | .11 ohm |
Maximum Feedback Capacitance (Crss): | 1 pF |
Polarity or Channel Type: | N-CHANNEL |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 200 V |
Additional Features: | HIGH RELIABILITY |
Peak Reflow Temperature (C): | NOT SPECIFIED |