Renesas Electronics - KGF12N05-400-SP

  1. Home
  2. Renesas Electronics - KGF12N05-400-SP
KGF12N05-400-SP by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number KGF12N05-400-SP
Description Small Signal Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet KGF12N05-400-SP Datasheet
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BSS84 by Continental Device India

BSS84

Continental Device India

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; JEDEC-95 Code: TO-236AB; Terminal Finish: MATTE TIN;
2N7002-G by Microchip Technology

2N7002-G

Microchip Technology

2N7002-G by Microchip Technology is a N-CHANNEL FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it has 0.115A Drain Current and 7.5 ohm On Resistance.
BSS123 by Zetex Plc

BSS123

Zetex Plc

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Time At Peak Reflow Temperature (s): 40; Maximum Drain Current (Abs) (ID): .17 A;
BSS138W-7-F by Multicomp Pro

BSS138W-7-F

Multicomp Pro

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Element Material: SILICON; No. of Elements: 1;
BC548B by Semiconductors

BC548B

Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e0;
BS170_D27Z by Fairchild Semiconductor

BS170_D27Z

Fairchild Semiconductor

BS170_D27Z by Fairchild Semiconductor is a N-CHANNEL small signal FET with a min DS breakdown voltage of 60V. It is commonly used for switching applications due to its single configuration with built-in diode and max drain current of 0.5A.
BSS84PWH6327XTSA1 by Infineon Technologies

BSS84PWH6327XTSA1

Infineon Technologies

BSS84PWH6327XTSA1 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage, 8 ohm RDS(on), and 3.8pF Crss. Ideal for small signal applications in electronics due to its compact SMALL OUTLINE package and ENHANCEMENT MODE operation at temperatures ranging from -55°C to 150°C.
2N7002K by Hy Electronic

2N7002K

Hy Electronic

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Additional Features: ULTRA LOW RESISTANCE; Package Body Material: PLASTIC/EPOXY;
BSS138W by Fairchild Semiconductor

BSS138W

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .34 W; Maximum Operating Temperature: 150 Cel; No. of Elements: 1;
2N7000-G by Supertex

2N7000-G

Supertex

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): .2 A; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 60 V;
IRLML6402TRPBF-1 by International Rectifier

IRLML6402TRPBF-1

International Rectifier

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 4.3 A;
2N7002 by Changzhou Galaxy Century Microelectronics

2N7002

Changzhou Galaxy Century Microelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Terminals: 3;
BSS138TA by Zetex Plc

BSS138TA

Zetex Plc

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Time At Peak Reflow Temperature (s): 40; Maximum Drain Current (Abs) (ID): .2 A;
SI4459ADY-T1-GE3 by Vishay Siliconix

SI4459ADY-T1-GE3

Vishay Siliconix

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain-Source On Resistance: .005 ohm;
FDC658P by Fairchild Semiconductor

FDC658P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FDS6679AZ by Fairchild Semiconductor

FDS6679AZ

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Position: DUAL; JESD-609 Code: e3;
ZXMS6004FFQTA by Diodes Incorporated

ZXMS6004FFQTA

Diodes Incorporated

ZXMS6004FFQTA by Diodes Inc. is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.6 ohm RDS(on), and -40 to 150 °C operating temp. Ideal for SWITCHING applications in automotive (AEC-Q101) due to ENHANCEMENT MODE tech and built-in diode.
SMMBFJ177LT1G by Onsemi

SMMBFJ177LT1G

Onsemi

Small Signal Field-Effect Transistors; Maximum Drain-Source On Resistance: 300 ohm; Terminal Finish: MATTE TIN; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260;
BSS83PL6327 by Infineon Technologies

BSS83PL6327

Infineon Technologies

BSS83PL6327 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage, 0.33A ID, and 2 ohm RDS(on). Ideal for small signal applications in electronics due to its compact size, ENHANCEMENT MODE operation, and low feedback capacitance of 9pF. Suitable for surface mount designs with GULL WING terminals.
SI4925DDY-T1-GE3 by Vishay Siliconix

SI4925DDY-T1-GE3

Vishay Siliconix

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING; Qualification: Not Qualified;