Renesas Electronics - MC-7712

  1. Home
  2. Renesas Electronics - MC-7712
MC-7712 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number MC-7712
Description WIDE BAND LOW POWER; Characteristic Impedance: 75 ohm; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 50 MHz; Gain: 18 dB; Minimum Operating Temperature: -30 Cel;
Datasheet MC-7712 Datasheet
NAME DESCRIPTION
Construction: COMPONENT
Minimum Operating Frequency: 50 MHz
Characteristic Impedance: 75 ohm
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 770 MHz
RF or Microwave Device Type: WIDE BAND LOW POWER
Minimum Operating Temperature: -30 Cel
Gain: 18 dB
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

HMC635LC4TR by Hittite Microwave

HMC635LC4TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Maximum Operating Temperature: 70 Cel;
ABA-52563-TR1G by Broadcom

ABA-52563-TR1G

Broadcom

Broadcom's ABA-52563-TR1G is a wide band low power RF amplifier with 20dB gain, operating from 0 to 3500MHz. It has a max input power of 20dBm and VSWR of 1.4, suitable for surface mount applications in RF & microwave systems. The component features bipolar technology, with a characteristic impedance of 50Ω and matte tin terminal finish.
BGU8019X by NXP Semiconductors

BGU8019X

NXP Semiconductors

The NXP Semiconductors BGU8019X is a RF & Microwave Amplifier with 16 dB Gain, operating from 1559 MHz to 1610 MHz. It has a Max Input Power of 10 dBm and operates in temperatures ranging from -40°C to 85°C. Ideal for narrow band low power applications with a characteristic impedance of 50 ohm.
TQP3M9028 by Triquint Semiconductor

TQP3M9028

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Gain: 13 dB; Characteristic Impedance: 50 ohm;
HMC517LC4 by Analog Devices

HMC517LC4

Analog Devices

Analog Devices' HMC517LC4 is a wide band low power RF amplifier with 15 dB gain, operating from 17-26 GHz. It has a max input power of 2 dBm and operates on a 3V supply. Ideal for RF and microwave applications requiring high frequency amplification in compact designs.
RDA1005LTR13 by Rf Micro Devices

RDA1005LTR13

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Power Supplies (V): 5; Characteristic Impedance: 50 ohm;
CMD244K5 by Qorvo

CMD244K5

Qorvo

WIDE BAND LOW POWER;
HMC505LP4ETR by Hittite Microwave

HMC505LP4ETR

Hittite Microwave

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;
ADL5610ARKZ-R7 by Analog Devices

ADL5610ARKZ-R7

Analog Devices

ADL5610ARKZ-R7 by Analog Devices is a wide band medium power RF amplifier with a gain of 13.2 dB. It operates in the frequency range of 30 MHz to 6000 MHz and can handle a max input power of 20 dBm. This component is suitable for applications requiring RF amplification in the RF & Microwave field.
SST12LP08-QXBE by Silicon Storage Technology

SST12LP08-QXBE

Silicon Storage Technology

NARROW BAND MEDIUM POWER; Maximum Input Power (CW): 5 dBm; Additional Features: HIGH RELIABILITY; Maximum Operating Frequency: 2484 MHz; Gain: 29 dB; Maximum Operating Temperature: 85 Cel;
AC1226 by Teledyne Technologies

AC1226

Teledyne Technologies

WIDE BAND LOW POWER; Minimum Operating Frequency: 10 MHz; Additional Features: I/P POWER-MAX (PEAK)=27DBM; Maximum Operating Frequency: 1200 MHz; Minimum Operating Temperature: -55 Cel; Characteristic Impedance: 50 ohm;
BGA2003T/R by NXP Semiconductors

BGA2003T/R

NXP Semiconductors

NXP Semiconductors' BGA2003T/R is a wide band low power RF amplifier with 16 dB gain, operating from 900 MHz to 1800 MHz. Ideal for RF applications requiring a 50 ohm impedance, this component offers high performance in amplifying signals within the specified frequency range.
HMC478ST89ETR by Analog Devices

HMC478ST89ETR

Analog Devices

Analog Devices' HMC478ST89ETR is a wide band low power RF amplifier with 11 dB gain, operating from 0 to 4000 MHz. It has a max input power of 5 dBm and operates on a 5V supply with a current draw of 82 mA. Ideal for RF & microwave applications requiring high performance in plastic/epoxy package.
BGA2817,115 by NXP Semiconductors

BGA2817,115

NXP Semiconductors

NXP Semiconductors' BGA2817,115 is a RF & Microwave Amplifier with 3.3V power supply, 6 terminals, and max operating temp of 85°C. It features surface mounting and tin terminal finish. Ideal for applications requiring high-frequency signal amplification in various electronic devices.
HMC383LC4TR by Hittite Microwave

HMC383LC4TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5;
HELA-10D+ by Mini-circuits

HELA-10D+

Mini-circuits

HELA-10D+ by Mini-circuits is a wideband medium power RF amplifier with 9.3 dB gain, operating from 8 MHz to 300 MHz. It offers a max input power of 20 dBm and VSWR of 1.2, making it ideal for RF & microwave applications requiring high performance amplification in a compact form factor.
SGL0363ZSR by Qorvo

SGL0363ZSR

Qorvo

The Qorvo SGL0363ZSR is a wide band low power RF amplifier with 15 dB gain and 50 ohm impedance. It operates from 5 MHz to 2000 MHz, with a max input power of 18 dBm. This component is ideal for RF and microwave applications requiring high performance in a compact package.
HMC994A by Analog Devices

HMC994A

Analog Devices

Analog Devices' HMC994A is a wide band medium power RF amplifier with 12.5 dB gain, handling up to 25 dBm CW input power. With a VSWR of 7, it operates from -55°C to 85°C, making it ideal for various RF and microwave applications up to 30 GHz.
TGA2701-SM by Qorvo

TGA2701-SM

Qorvo

TGA2701-SM by Qorvo is a wide band high power RF amplifier with 18 dB gain. It operates from 5900 MHz to 8500 MHz, handling up to 29 dBm CW input power. Ideal for applications requiring high power amplification in RF and microwave systems.
MAAM28000-A1G by M/a-com Technology Solutions

MAAM28000-A1G

M/a-com Technology Solutions

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: CERAMIC; Technology: GAAS; Construction: COMPONENT;