Renesas Electronics - N0501S-T1-AT

FMMT458TA by Diodes Inc. is a NPN BJT transistor with 100 min hFE, 400V VCEO, and 50MHz fT. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mounting. Operating up to 150°C, it has a max power dissipation of 0.5W.

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .6 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: WIRE;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

BC547BTF by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 45V and max. collector current of 0.1A, ideal for switching applications. With a min. DC current gain of 200 and nominal transition frequency of 300MHz, it offers reliable performance in a cylindrical package suitable for through-hole mounting. Operating at up to 150°C, this transistor has a max power dissipation of 0.625W making it versatile for various electronic designs.

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .6 A; Terminal Position: BOTTOM; No. of Elements: 1;

Toshiba's ULN2803AFWG(O,ELM) is an NPN BJT with 8 Darlington banks, built-in diode/resistor. Ideal for switching applications, it has a hFE of 1000 and can handle up to 50V/0.5A. This surface-mount transistor comes in a small outline package with Gull Wing terminals.

MMBT3906TT1G by Onsemi is a PNP small signal BJT transistor with a max collector-emitter voltage of 40V. It has a min DC current gain of 30 and can handle a max collector current of 0.2A. This transistor is commonly used in amplifier applications due to its high transition frequency of 250MHz.

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): .03 A; Package Shape: ROUND;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Reference Standard: MIL-19500/255; Maximum Collector-Emitter Voltage: 50 V;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Maximum VCEsat: .7 V;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Terminal Finish: TIN;

ULN2003ADR by Texas Instruments is a NPN BJT with 7 elements, max IC of 0.5A, and VCEsat of 1.6V. Ideal for switching applications in small outline packages with Gull Wing terminals.

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 100; Maximum Turn Off Time (toff): 300 ns;

Small Signal Bipolar Transistors; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): .8 A;