Renesas Electronics - NDL3210

  1. Home
  2. Renesas Electronics - NDL3210
NDL3210 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number NDL3210
Description LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: AlGaInP; Maximum Forward Current: .02 A; Peak Wavelength (nm): 675; Minimum Operating Temperature: -10 Cel;
Datasheet NDL3210 Datasheet
NAME DESCRIPTION
Optoelectronic Type: LASER DIODE
Maximum Forward Current: .02 A
Peak Wavelength (nm): 675
Maximum Operating Temperature: 50 Cel
Semiconductor Material: AlGaInP
Sub-Category: Laser Diodes
Minimum Operating Temperature: -10 Cel
Mounting Feature: THROUGH HOLE MOUNT
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

NX8567SA287-CC by Renesas Electronics

NX8567SA287-CC

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1528; Maximum Response Time: .000000000125 s; Maximum Forward Current: .15 A;
TOLD80E by Toshiba

TOLD80E

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Spectral Bandwidth: 3 m; Semiconductor Material: InGaAs; Minimum Operating Temperature: 0 Cel;
NX8563LF6014-BA-AZ by Renesas Electronics

NX8563LF6014-BA-AZ

Renesas Electronics

LASER DIODE; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1601; Maximum Forward Voltage: 2.5 V; Minimum Operating Temperature: -20 Cel; Semiconductor Material: InGaAsP;
NX8570SC687-BA-A by Renesas Electronics

NX8570SC687-BA-A

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .3 A; Minimum Operating Temperature: -5 Cel; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1568;
SPLCG98 by Infineon Technologies

SPLCG98

Infineon Technologies

LASER DIODE; Mounting Feature: SURFACE MOUNT; Size: 4.5 mm; No. of Functions: 1; Minimum Operating Temperature: -10 Cel; Maximum Threshold Current: 550 mA;
SPLBG94 by Infineon Technologies

SPLBG94

Infineon Technologies

LASER DIODE; Semiconductor Material: InGaAs/GaAs; Spectral Bandwidth: 4 m; Peak Wavelength (nm): 940;
DL-5146-351 by Onsemi

DL-5146-351

Onsemi

DL-5146-351 by Onsemi is a LASER DIODE with 405nm Peak Wavelength, 0.11A Max Forward Current, and 6.5V Max Forward Voltage. It operates b/w -10 °C to 60°C, suitable for THROUGH HOLE MOUNT applications in various industries.
NX8564LE461-BC by Renesas Electronics

NX8564LE461-BC

Renesas Electronics

LASER DIODE; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1546; Maximum Response Time: .000000000125 s; Minimum Operating Temperature: -20 Cel;
CQF25A/D14 by NXP Semiconductors

CQF25A/D14

NXP Semiconductors

CQF25A/D14 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 820 nm and a max forward current of 0.15 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks.
TOLD9462MC(TR) by Toshiba

TOLD9462MC(TR)

Toshiba

Laser Diodes;
SDL9952-001 by Onsemi

SDL9952-001

Onsemi

SDL9952-001 by Onsemi is an 830nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications in optoelectronics.
SDL5140-201 by Onsemi

SDL5140-201

Onsemi

SDL5140-201 by Onsemi is an 800nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications in optoelectronics.
SDL5033-101 by Onsemi

SDL5033-101

Onsemi

SDL5033-101 by Onsemi is an 875nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications in optoelectronics.
TOLD9150(S) by Toshiba

TOLD9150(S)

Toshiba

LASER DIODE; Peak Wavelength (nm): 690; No. of Functions: 1; Nominal Output Power: 30 W;
SDL5030-011 by Onsemi

SDL5030-011

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 790; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel;
TOLD323ACB by Toshiba

TOLD323ACB

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Minimum Operating Temperature: -30 Cel; Maximum Forward Voltage: 2 V; Semiconductor Material: InGaAs;
CQF25A/D52 by NXP Semiconductors

CQF25A/D52

NXP Semiconductors

CQF25A/D52 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 820 nm and a max forward current of 0.15 A. It operates efficiently b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks in communication systems.
SDL7032-101 by Onsemi

SDL7032-101

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 830;
NX8570SA397-CA by Renesas Electronics

NX8570SA397-CA

Renesas Electronics

LASER DIODE; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1540; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .3 A; Maximum Operating Temperature: 70 Cel;
NX8570SC589-BA-A by Renesas Electronics

NX8570SC589-BA-A

Renesas Electronics

LASER DIODE; Peak Wavelength (nm): 1558; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A;