Renesas Electronics - NDL5730P

NDL5730P by Renesas Electronics

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	NDL5730P
Description	LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Maximum Operating Temperature: 65 Cel; Spectral Bandwidth: 2 m; Semiconductor Material: InGaAs;
Datasheet	NDL5730P Datasheet

NDL5730P Technical Details

NAME	DESCRIPTION
Optoelectronic Type:	LASER DIODE
Maximum Forward Current:	.085 A
Peak Wavelength (nm):	1310
Maximum Response Time:	.0000000003 s
Spectral Bandwidth:	2 m
Maximum Operating Temperature:	65 Cel
Semiconductor Material:	InGaAs
Sub-Category:	Laser Diodes
Maximum Forward Voltage:	1.3 V
Minimum Operating Temperature:	-20 Cel
Mounting Feature:	THROUGH HOLE MOUNT

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