Renesas Electronics - NDL7564P1

NDL7564P1 by Renesas Electronics

Image shown is a representation only.

Manufacturer	Renesas Electronics
Manufacturer's Part Number	NDL7564P1
Description	PULSED LASER DIODE EMITTER; Mounting Feature: PANEL MOUNT, THROUGH HOLE MOUNT; Fiber Type: 9/125, SMF; Maximum Operating Wavelength: 1570 nm; Additional Features: ITS ALSO OPERATES IN 1520 TO 1585 NM WAVELENGHT, SPECTRAL WIDTH 10 NM; Minimum Threshold Current: 40 mA;
Datasheet	NDL7564P1 Datasheet

NDL7564P1 Technical Details

NAME	DESCRIPTION
Maximum Fall Time:	1 ns
Spectral Width:	6 nm
Built-in Features:	LASER DIODE, TEC
Minimum Threshold Current:	40 mA
Minimum Operating Wavelength:	1530 nm
Fiber Type:	9/125, SMF
Transmission Type:	DIGITAL
Mounting Feature:	PANEL MOUNT, THROUGH HOLE MOUNT
Maximum Operating Wavelength:	1570 nm
Rise Time:	1 ns
Nominal Operating Wavelength:	1550 nm
Fiber Optic Type:	PULSED LASER DIODE EMITTER
Additional Features:	ITS ALSO OPERATES IN 1520 TO 1585 NM WAVELENGHT, SPECTRAL WIDTH 10 NM

Popular Products

MS3V-T1R32.768KHZ+/-20PPM12.5PF

Golledge Electronics

MS3V-T1R32.768KHZ+/-20PPM12.5PF by Golledge Electronics is a crystal oscillator with 20 ppm frequency tolerance, 126% stability, and 12.5 pF load capacitance. It is ideal for applications requiring precise timing in temperature-sensitive environments due to its -40 to 85 °C operating range.

ABS06-32.768KHZ-T

Abracon

Abracon's ABS06-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 90000 ohm series resistance, and -40 to 85 °C operating temperature range. Ideal for applications requiring precise timing in compact designs like IoT devices and wearables.

2N2222A

Itt Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

MBRS130LT3G

Rochester Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

FDN5618P

Onsemi

FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.

BSS138

North American Philips Discrete Products Div

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): .2 A;

LM107H

General Electric Solid State

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Minimum Voltage Gain: 25000;

1N4148

Rugao Dachang Electronic

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

BAV99

Weitronic Enterprise

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BAV99

Surge Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Category Top Products