Renesas Electronics - NE21800

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Case Connection: SOURCE;

BF545C-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a min DS breakdown voltage of 30V, operates in depletion mode, and supports very high frequency bands. This compact surface mount transistor ensures reliable performance up to 150 °C.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; JESD-609 Code: e0; JEDEC-95 Code: TO-72;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; No. of Terminals: 4; Transistor Application: AMPLIFIER; Case Connection: SOURCE;

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; No. of Elements: 1; Terminal Finish: TIN LEAD; Transistor Element Material: SILICON;

BF245AZL1 by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it has a max ID of 0.1A and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; No. of Elements: 2;

The NXP Semiconductors BLF521 is an N-CHANNEL RF FET with 40V DS breakdown voltage and 10dB power gain. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a 1A max drain current and operates at up to 200°C.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JEDEC-95 Code: TO-92; Operating Mode: DEPLETION MODE; Package Style (Meter): CYLINDRICAL;

Onsemi's 2N5484RL is an N-CHANNEL RF FET with 16 dB Gp, ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND. Featuring DEPLETION MODE operation, it has a max ID of 0.03 A and Crss of 1 pF, housed in a PLASTIC/EPOXY ROUND package with THROUGH-HOLE terminals.

BF245B,126 by NXP Semiconductors is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. It operates in DEPLETION MODE for AMPLIFIER applications at ULTRA HIGH FREQUENCY. With 0.3W power dissipation and 0.025A Drain Current, it has a max operating temperature of 150°C.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Shape: RECTANGULAR; Terminal Form: GULL WING;

Broadcom's ATF-54143-TR1G is an N-channel RF FET with 5V DS breakdown voltage and 15dB power gain, ideal for amplifier applications in C band. It features a small outline package, Gull Wing terminals, and operates in enhancement mode with high electron mobility technology. With a max power dissipation of 0.725W and operating temperature of 150°C, it offers reliable performance for various RF signal amplification needs.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; No. of Terminals: 4; Case Connection: SOURCE;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 12 V; JESD-609 Code: e3; Terminal Position: DUAL;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .03 A; Terminal Position: DUAL; Moisture Sensitivity Level (MSL): 1;

J308RL1 by Onsemi is an N-CHANNEL RF FET with 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a SINGLE configuration and DEPLETION MODE operation. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND;

The Onsemi 2N5486G is an N-CHANNEL RF FET with a single configuration for amplifier applications. It offers a min power gain of 10 dB and operates in depletion mode at ultra-high frequencies. With a max power dissipation of 0.31 W, it features a cylindrical package shape and junction FET technology.

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Finish: MATTE TIN; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; JESD-30 Code: R-PDSO-G4;