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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | NE25139T1U73 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PDSO-G4; Transistor Element Material: GALLIUM ARSENIDE; Transistor Application: AMPLIFIER; |
| Datasheet | NE25139T1U73 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Minimum Power Gain (Gp): | 16 dB |
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE |
| Transistor Element Material: | GALLIUM ARSENIDE |
| Field Effect Transistor Technology: | METAL SEMICONDUCTOR |
| Transistor Application: | AMPLIFIER |
| Maximum Feedback Capacitance (Crss): | .03 pF |
| Maximum Drain Current (ID): | .035 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 4 |
| Minimum DS Breakdown Voltage: | 13 V |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | DEPLETION MODE |
| Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
| Maximum Operating Temperature: | 125 Cel |
| Maximum Drain Current (Abs) (ID): | .035 A |
| Maximum Power Dissipation Ambient: | .2 W |
