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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | NE25337-M |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL SEMICONDUCTOR; Terminal Position: RADIAL; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; |
| Datasheet | NE25337-M Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Minimum Power Gain (Gp): | 16 dB |
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE |
| Transistor Element Material: | GALLIUM ARSENIDE |
| Field Effect Transistor Technology: | METAL SEMICONDUCTOR |
| Transistor Application: | AMPLIFIER |
| Maximum Feedback Capacitance (Crss): | .035 pF |
| Maximum Drain Current (ID): | .035 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 4 |
| Minimum DS Breakdown Voltage: | 10 V |
| Terminal Position: | RADIAL |
| Package Style (Meter): | DISK BUTTON |
| JESD-30 Code: | O-PRDB-F4 |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | FLAT |
| Operating Mode: | DUAL GATE, ENHANCEMENT MODE |
| Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
| Maximum Operating Temperature: | 125 Cel |
| Maximum Drain Current (Abs) (ID): | .035 A |
| Maximum Power Dissipation Ambient: | .2 W |
