Renesas Electronics - NE25339

NE25339 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number NE25339
Description N-CHANNEL; Maximum Operating Temperature: 125 Cel; Maximum Drain Current (Abs) (ID): .08 A; Field Effect Transistor Technology: METAL SEMICONDUCTOR; Maximum Drain Current (ID): .08 A; Maximum Power Dissipation Ambient: .2 W;
Datasheet NE25339 Datasheet
NAME DESCRIPTION
Field Effect Transistor Technology: METAL SEMICONDUCTOR
Maximum Operating Temperature: 125 Cel
Maximum Drain Current (ID): .08 A
Maximum Drain Current (Abs) (ID): .08 A
Sub-Category: FET RF Small Signal
Polarity or Channel Type: N-CHANNEL
Maximum Power Dissipation Ambient: .2 W
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products