Renesas Electronics - NE321000-A

NE321000-A by Renesas Electronics

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	NE321000-A
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: UNSPECIFIED; Qualification: Not Qualified; Transistor Element Material: GALLIUM ARSENIDE;
Datasheet	NE321000-A Datasheet

NE321000-A Technical Details

NAME	DESCRIPTION
Minimum Power Gain (Gp):	12 dB
Package Body Material:	UNSPECIFIED
Configuration:	SINGLE
Transistor Element Material:	GALLIUM ARSENIDE
Field Effect Transistor Technology:	HETERO-JUNCTION
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	.015 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Terminal Finish:	TIN BISMUTH
JESD-609 Code:	e6
No. of Terminals:	4
Minimum DS Breakdown Voltage:	3 V
Qualification:	Not Qualified
Terminal Position:	UPPER
Package Style (Meter):	UNCASED CHIP
JESD-30 Code:	S-XUUC-N4
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	DEPLETION MODE
Highest Frequency Band:	KA BAND

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