Renesas Electronics - NE334S01-T1B

  1. Home
  2. Renesas Electronics - NE334S01-T1B
NE334S01-T1B by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number NE334S01-T1B
Description N-CHANNEL; Maximum Drain Current (Abs) (ID): .15 A; Maximum Drain Current (ID): .15 A; Maximum Power Dissipation Ambient: .3 W; Maximum Operating Temperature: 125 Cel;
Datasheet NE334S01-T1B Datasheet
NAME DESCRIPTION
Maximum Operating Temperature: 125 Cel
Maximum Drain Current (ID): .15 A
Maximum Drain Current (Abs) (ID): .15 A
Sub-Category: FET RF Small Signal
Polarity or Channel Type: N-CHANNEL
Maximum Power Dissipation Ambient: .3 W
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

3SK168D by Onsemi

3SK168D

Onsemi

N-CHANNEL; Field Effect Transistor Technology: METAL SEMICONDUCTOR; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 125 Cel; Maximum Power Dissipation Ambient: .25 W; JESD-609 Code: e0;
2N4416A by Vishay Intertechnology

2N4416A

Vishay Intertechnology

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Minimum Power Gain (Gp): 10 dB; Terminal Finish: TIN LEAD;
2N3819 by Texas Instruments

2N3819

Texas Instruments

2N3819 by Texas Instruments is an N-CHANNEL RF Small Signal Field Effect Transistor (FET) with a min DS Breakdown Voltage of 25V. It operates in DEPLETION MODE and has a max power dissipation of 0.36W. This transistor is commonly used in applications requiring low-power amplification or switching.
BF245BAMO by NXP Semiconductors

BF245BAMO

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): CYLINDRICAL; Operating Mode: DEPLETION MODE; Terminal Form: THROUGH-HOLE;
MMBFJ310LT1 by Onsemi

MMBFJ310LT1

Onsemi

MMBFJ310LT1 by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage. Operating in DEPLETION MODE, it's ideal for ULTRA HIGH FREQUENCY AMPLIFIER applications. With a max power dissipation of 0.225W and peak reflow temperature of 235°C, this transistor offers high performance in a SMALL OUTLINE package.
BLF888 by NXP Semiconductors

BLF888

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 104 V; Peak Reflow Temperature (C): 260;
BF244ARL by Onsemi

BF244ARL

Onsemi

BF244ARL by Onsemi is an N-CHANNEL RF FET with 30V DS breakdown voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it has a max ID of 0.1A and operates in DEPLETION MODE. Package PLASTIC/EPOXY, Shape ROUND, Terminals 3.
BF245ARLRM by Onsemi

BF245ARLRM

Onsemi

BF245ARLRM by Onsemi is an N-CHANNEL RF FET with 30V DS breakdown voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it has a max ID of 0.1A and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
BF998,235 by NXP Semiconductors

BF998,235

NXP Semiconductors

BF998,235 by NXP Semiconductors is an N-CHANNEL RF FET with a 12V DS Breakdown Voltage. It operates in DEPLETION MODE and has a max ID of 0.03A. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, this transistor features a GULL WING terminal form and can handle up to 0.2W power dissipation.
NE3210S01-T1B by Nec Compound Semiconductor Devices

NE3210S01-T1B

Nec Compound Semiconductor Devices

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 4; Maximum Drain Current (ID): .015 A; Minimum Power Gain (Gp): 12 dB;
FLL177ME by Eudyna Devices

FLL177ME

Eudyna Devices

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Minimum DS Breakdown Voltage: 15 V; No. of Elements: 1;
BF1216 by NXP Semiconductors

BF1216

NXP Semiconductors

BF1216 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 6V min DS breakdown voltage, operates in the ultra-high frequency band, and comes in a compact surface mount package. Ideal for enhancing signal amplification in various electronic devices.
TGF1350-SCC by Texas Instruments

TGF1350-SCC

Texas Instruments

TGF1350-SCC by Texas Instruments is an RF FET with 8V DS breakdown voltage, 2.5 dB power gain, and operates in depletion mode. Ideal for KU band applications, this GaAs transistor has a rectangular package shape and 6 terminals for high-frequency performance.
BF247A by NXP Semiconductors

BF247A

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Shape: ROUND; Field Effect Transistor Technology: JUNCTION; JEDEC-95 Code: TO-92;
TGF4250-SCC by Texas Instruments

TGF4250-SCC

Texas Instruments

TGF4250-SCC by Texas Instruments is a RF FET with 6V DS breakdown voltage, operating in depletion mode for KU band applications. Utilizes GaAs technology in rectangular package, surface mountable as unencased chip with 4 terminals.
2N4222A by Texas Instruments

2N4222A

Texas Instruments

2N4222A by Texas Instruments is an N-CHANNEL RF FET with a max power dissipation of 0.3W and max operating temp of 200°C. Ideal for switching applications, it features a single configuration in a cylindrical package with isolated case connection.
J309RL1 by Onsemi

J309RL1

Onsemi

J309RL1 by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring DEPLETION MODE operation, this transistor has a Max Operating Temperature of 125 °C and a Crss of 2.5 pF, housed in a CYLINDRICAL package with THROUGH-HOLE terminals.
BF513-T by NXP Semiconductors

BF513-T

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Transistor Element Material: SILICON; Terminal Form: GULL WING;
BF998RT/R by NXP Semiconductors

BF998RT/R

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: AMPLIFIER;
2N5549 by Texas Instruments

2N5549

Texas Instruments

2N5549 by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. Operating in DEPLETION MODE, it offers a VERY HIGH FREQUENCY BAND. With a max power dissipation of 0.36W and feedback capacitance of 2pF, it is ideal for RF applications.