NE350184C-T1A-A by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	NE350184C-T1A-A
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Power Gain (Gp): 11 dB; Terminal Form: FLAT; Maximum Drain Current (ID): .015 A;
Datasheet	NE350184C-T1A-A Datasheet

NAME	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	JUNCTION
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	.015 A
Sub-Category:	FET RF Small Signal
Surface Mount:	YES
Terminal Finish:	TIN BISMUTH
No. of Terminals:	4
Terminal Position:	RADIAL
Package Style (Meter):	DISK BUTTON
JESD-30 Code:	O-CRDB-F4
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	FLAT
Operating Mode:	DEPLETION MODE
Highest Frequency Band:	K BAND
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	.165 W
Minimum Power Gain (Gp):	11 dB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e6
Minimum DS Breakdown Voltage:	3 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	.07 A

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