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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | NE3508M04-T2-A |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .175 W; JESD-30 Code: R-PDSO-F4; Terminal Finish: TIN BISMUTH; |
| Datasheet | NE3508M04-T2-A Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | HETERO-JUNCTION |
| Transistor Application: | AMPLIFIER |
| Maximum Drain Current (ID): | .03 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| Terminal Finish: | TIN BISMUTH |
| No. of Terminals: | 4 |
| Maximum Power Dissipation (Abs): | .175 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-F4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | DEPLETION MODE |
| Highest Frequency Band: | S BAND |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Minimum Power Gain (Gp): | 12 dB |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e6 |
| Minimum DS Breakdown Voltage: | 3 V |
| Qualification: | Not Qualified |
| Additional Features: | LOW NOISE |
