NE3511S02-T1C by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	NE3511S02-T1C
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: DEPLETION MODE; Terminal Form: FLAT; Qualification: Not Qualified;
Datasheet	NE3511S02-T1C Datasheet

NAME	DESCRIPTION
Minimum Power Gain (Gp):	12.5 dB
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	HETERO-JUNCTION
Transistor Application:	AMPLIFIER
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Terminal Finish:	TIN LEAD
JESD-609 Code:	e0
No. of Terminals:	4
Minimum DS Breakdown Voltage:	4 V
Qualification:	Not Qualified
Terminal Position:	UNSPECIFIED
Package Style (Meter):	MICROWAVE
JESD-30 Code:	R-PXMW-F4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	DEPLETION MODE
Additional Features:	LOW NOISE
Highest Frequency Band:	KU BAND

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