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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | NE3511S02-T1D-A |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .165 W; Field Effect Transistor Technology: HETERO-JUNCTION; Qualification: Not Qualified; |
| Datasheet | NE3511S02-T1D-A Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | HETERO-JUNCTION |
| Transistor Application: | AMPLIFIER |
| Maximum Drain Current (ID): | .02 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| Terminal Finish: | TIN BISMUTH |
| No. of Terminals: | 4 |
| Maximum Power Dissipation (Abs): | .165 W |
| Terminal Position: | QUAD |
| Package Style (Meter): | MICROWAVE |
| JESD-30 Code: | R-PQMW-F4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | DEPLETION MODE |
| Highest Frequency Band: | KU BAND |
| Maximum Operating Temperature: | 125 Cel |
| Minimum Power Gain (Gp): | 12.5 dB |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e6 |
| Minimum DS Breakdown Voltage: | 3 V |
| Qualification: | Not Qualified |
