NE3512S02-T1C-A by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	NE3512S02-T1C-A
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .165 W; Package Shape: RECTANGULAR; No. of Elements: 1;
Datasheet	NE3512S02-T1C-A Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	HETERO-JUNCTION
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	.015 A
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	TIN BISMUTH
No. of Terminals:	4
Maximum Power Dissipation (Abs):	.165 W
Terminal Position:	QUAD
Package Style (Meter):	MICROWAVE
JESD-30 Code:	R-PQMW-F4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	DEPLETION MODE
Highest Frequency Band:	KU BAND
Maximum Operating Temperature:	125 Cel
Minimum Power Gain (Gp):	12.5 dB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e6
Minimum DS Breakdown Voltage:	3 V
Qualification:	Not Qualified
Additional Features:	LOW NOISE

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