Renesas Electronics - NE3513M04-A

  1. Home
  2. Renesas Electronics - NE3513M04-A
NE3513M04-A by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number NE3513M04-A
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .125 W; Maximum Operating Temperature: 125 Cel; Field Effect Transistor Technology: JUNCTION;
Datasheet NE3513M04-A Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): .125 W
Field Effect Transistor Technology: JUNCTION
Maximum Operating Temperature: 125 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BD138 by National Semiconductor

BD138

National Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
MMBT3904 by Philips Semiconductors

MMBT3904

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .2 A;
FDN306P-F095 by Fairchild Semiconductor

FDN306P-F095

Fairchild Semiconductor

FDN306P-F095 by Fairchild Semiconductor is a P-CHANNEL MOSFET with 2.6A max drain current and 0.5W max power dissipation. Ideal for surface mount applications, it operates in enhancement mode at up to 150°C, making it suitable for various electronic devices requiring efficient power management.
BC548C by North American Philips Discrete Products Div

BC548C

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BC856B by Jiangsu Changjiang Electronics Technology

BC856B

Jiangsu Changjiang Electronics Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
TIP3055 by Tt Electronics Plc

TIP3055

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 15 A;
TIP31C by Plessey Semiconductors Discrete Components Div

TIP31C

Plessey Semiconductors Discrete Components Div

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;
BC817-16 by North American Philips Discrete Products Div

BC817-16

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 100;
BC546B by Unisonic Technologies

BC546B

Unisonic Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel;
MMBT2907ALT1 by Synsemi

MMBT2907ALT1

Synsemi

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
BSS84 by North American Philips Discrete Products Div

BSS84

North American Philips Discrete Products Div

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; JESD-609 Code: e0; Maximum Drain Current (Abs) (ID): .13 A;
2N3019 by Boca Semiconductor

2N3019

Boca Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;
TIP120 by General Electric Solid State

TIP120

General Electric Solid State

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; JESD-609 Code: e0;
BSR14 by Philips Semiconductors

BSR14

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .8 A;
2N2222A by Philips Semiconductors

2N2222A

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
TIP32C by Harris Semiconductor

TIP32C

Harris Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
TIP50 by Harris Semiconductor

TIP50

Harris Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 5 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
BC337-16 by Itt Components

BC337-16

Itt Components

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; No. of Elements: 1;
BC327-25 by Itt Components

BC327-25

Itt Components

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; Maximum Operating Temperature: 150 Cel;
D44H8 by Boca Semiconductor

D44H8

Boca Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 15 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;