Renesas Electronics - NE3521M04-T2-A

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NE3521M04-T2-A by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number NE3521M04-T2-A
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 125 Cel; Minimum Power Gain (Gp): 9 dB; Transistor Application: AMPLIFIER;
Datasheet NE3521M04-T2-A Datasheet
NAME DESCRIPTION
Minimum Power Gain (Gp): 9 dB
Other Names: 2156-NE3521M04-T2-A
RENRNSNE3521M04-T2-A
2156-NE3521M04-T2-A-RETR-ND
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: GALLIUM ARSENIDE
Field Effect Transistor Technology: HETERO-JUNCTION
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): .015 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 4 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: DEPLETION MODE
Highest Frequency Band: K BAND
Maximum Operating Temperature: 125 Cel
Maximum Drain Current (Abs) (ID): .07 A
Maximum Power Dissipation Ambient: .125 W
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