Renesas Electronics - NE4210S01-T1B

NE4210S01-T1B by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number NE4210S01-T1B
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 125 Cel; Package Shape: UNSPECIFIED;
Datasheet NE4210S01-T1B Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: HETERO-JUNCTION
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): .015 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: NICKEL GOLD
No. of Terminals: 4
Terminal Position: UNSPECIFIED
Package Style (Meter): MICROWAVE
JESD-30 Code: X-PXMW-G4
No. of Elements: 1
Package Shape: UNSPECIFIED
Terminal Form: GULL WING
Operating Mode: DEPLETION MODE
Highest Frequency Band: KU BAND
Maximum Operating Temperature: 125 Cel
Case Connection: SOURCE
Minimum Power Gain (Gp): 11 dB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e4
Minimum DS Breakdown Voltage: 3 V
Qualification: Not Qualified
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