NE425S01-T1 by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	NE425S01-T1
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: KU BAND; Package Shape: ROUND; Field Effect Transistor Technology: HETERO-JUNCTION;
Datasheet	NE425S01-T1 Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	HETERO-JUNCTION
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	.02 A
Sub-Category:	FET RF Small Signals
Surface Mount:	YES
No. of Terminals:	4
Terminal Position:	RADIAL
Package Style (Meter):	DISK BUTTON
JESD-30 Code:	O-XRDB-G4
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	GULL WING
Operating Mode:	DEPLETION MODE
Highest Frequency Band:	KU BAND
Maximum Operating Temperature:	125 Cel
Maximum Power Dissipation Ambient:	.165 W
Minimum Power Gain (Gp):	10.5 dB
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	3 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	.09 A
Peak Reflow Temperature (C):	NOT SPECIFIED

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