NE429M01-T1 by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	NE429M01-T1
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (Abs) (ID): .02 A; Minimum Power Gain (Gp): 9 dB; Maximum Power Dissipation Ambient: .125 W;
Datasheet	NE429M01-T1 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	HETERO-JUNCTION
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	.02 A
Sub-Category:	FET RF Small Signal
Surface Mount:	YES
Terminal Finish:	TIN LEAD
No. of Terminals:	6
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	DEPLETION MODE
Highest Frequency Band:	KU BAND
Maximum Operating Temperature:	125 Cel
Maximum Power Dissipation Ambient:	.125 W
Minimum Power Gain (Gp):	9 dB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Minimum DS Breakdown Voltage:	3 V
Qualification:	Not Qualified
Additional Features:	LOW NOISE
Maximum Drain Current (Abs) (ID):	.02 A

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