Renesas Electronics - NE5511279A

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NE5511279A by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number NE5511279A
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 3 A; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON;
Datasheet NE5511279A Datasheet
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 3 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 4
Minimum DS Breakdown Voltage: 8 V
Qualification: Not Qualified
Terminal Position: QUAD
Package Style (Meter): MICROWAVE
JESD-30 Code: R-XQMW-F4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Case Connection: SOURCE
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