NE5520379A-T1 by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	NE5520379A-T1
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Highest Frequency Band: L BAND; Maximum Drain Current (Abs) (ID): 1.5 A;
Datasheet	NE5520379A-T1 Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	1.5 A
Sub-Category:	FET General Purpose Power
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	4
Minimum DS Breakdown Voltage:	15 V
Qualification:	Not Qualified
Terminal Position:	QUAD
Package Style (Meter):	MICROWAVE
JESD-30 Code:	R-XQMW-F4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Highest Frequency Band:	L BAND
Maximum Operating Temperature:	125 Cel
Maximum Drain Current (Abs) (ID):	1.5 A
Case Connection:	SOURCE

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