Renesas Electronics - NE5550279A-T1-A

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NE5550279A-T1-A by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number NE5550279A-T1-A
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;
Datasheet NE5550279A-T1-A Datasheet
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): .6 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 30 V
Terminal Position: QUAD
Package Style (Meter): MICROWAVE
JESD-30 Code: R-XQMW-F4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): .6 A
Case Connection: SOURCE
Maximum Power Dissipation Ambient: 6.25 W
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