Renesas Electronics - NE5550979A-AZ

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NE5550979A-AZ by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number NE5550979A-AZ
Description RF Power Field-Effect Transistors;
Datasheet NE5550979A-AZ Datasheet
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AFT09H310-03SR6 by NXP Semiconductors

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NXP Semiconductors' AFT09H310-03SR6 is an N-CHANNEL RF Power FET with METAL-OXIDE SEMICONDUCTOR tech. It operates up to 225°C, withstands peak reflow at 260°C for 40s. Ideal for high-frequency applications in various industries.
MRF6VP11KHR5 by NXP Semiconductors

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N-CHANNEL; Maximum Time At Peak Reflow Temperature (s): 40; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 225 Cel;
BLF6G15L-40RN by NXP Semiconductors

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RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED; Moisture Sensitivity Level (MSL): NOT APPLICABLE;
A2T18S262W12NR3 by NXP Semiconductors

A2T18S262W12NR3

NXP Semiconductors

RF Power Field-Effect Transistors; Terminal Finish: TIN; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260;
TRF7003PK by Texas Instruments

TRF7003PK

Texas Instruments

TRF7003PK by Texas Instruments is a single N-channel RF Power FET for amplifier applications. It operates in enhancement mode with a max drain current of 2A and breakdown voltage of 15V. Ideal for ultra-high frequency bands, it features a small outline package and can withstand temperatures up to 85°C.
PD55008S-E by STMicroelectronics

PD55008S-E

STMicroelectronics

STMicroelectronics PD55008S-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage and 4A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features a 52.8W Power Dissipation, SMALL OUTLINE package style, and operates at up to 165°C temperature.
PD60030 by STMicroelectronics

PD60030

STMicroelectronics

PD60030 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a 65V min DS breakdown voltage, operates in enhancement mode, and supports L band frequencies. Its compact surface mount design ensures efficient performance in various electronic devices.
A3G23H500W17SR3 by NXP Semiconductors

A3G23H500W17SR3

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; JESD-30 Code: R-CQFP-F6; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Shape: RECTANGULAR;
FLL57MK by Sumitomo Electric Industries

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Sumitomo Electric Industries

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Highest Frequency Band: L BAND; No. of Terminals: 2;
D2225UK by Tt Electronics Plc

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Tt Electronics Plc

D2225UK by Tt Electronics Plc is an N-CHANNEL RF Power FET with 2 elements in a COMMON SOURCE configuration. It operates in the ULTRA HIGH FREQUENCY BAND, with a max ID of 4A and VDS of 40V. Ideal for AMPLIFIER applications, this transistor has GULL WING terminals and can withstand up to 200°C operating temperature.
SD2931-10 by STMicroelectronics

SD2931-10

STMicroelectronics

SD2931-10 by STMicroelectronics is an N-channel RF Power FET with a 125V DS breakdown voltage and 20A max drain current. Ideal for UHF applications, it operates in enhancement mode with a max power dissipation of 389W. The transistor features a plastic/epoxy package body, flat terminals, and nickel palladium gold finish.
MRF9030LR1 by Motorola

MRF9030LR1

Motorola

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 92 W; Operating Mode: ENHANCEMENT MODE; Package Shape: RECTANGULAR;
MRFE6VP6300HR3 by Freescale Semiconductor

MRFE6VP6300HR3

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; Peak Reflow Temperature (C): 260; Case Connection: SOURCE;
MRFE6VS25GNR1 by NXP Semiconductors

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NXP Semiconductors

NXP Semiconductors' MRFE6VS25GNR1 is a single N-channel RF Power FET with 24.5 dB power gain, operating in the ultra-high frequency band. It features a min DS breakdown voltage of 133 V and can handle up to 25 W power dissipation. Ideal for applications requiring high-power amplification in the RF domain.
MRF300AN-144MHZ by NXP Semiconductors

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MRFE6VP61K25HR6 by Freescale Semiconductor

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Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 1300 W; Maximum Time At Peak Reflow Temperature (s): 40; No. of Terminals: 4;
SD57030 by STMicroelectronics

SD57030

STMicroelectronics

SD57030 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max temp of 200 °C.
934065183112 by NXP Semiconductors

934065183112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Additional Features: HIGH RELIABILITY; Minimum DS Breakdown Voltage: 65 V;
AFT05MS031NR1 by Freescale Semiconductor

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Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 294 W; Peak Reflow Temperature (C): 260; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SD2943W by STMicroelectronics

SD2943W

STMicroelectronics

SD2943W by STMicroelectronics is an N-CHANNEL RF Power FET with 40A max drain current and 648W max power dissipation. Ideal for high-power applications, it operates at up to 200°C and features metal-oxide semiconductor technology.