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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | NE650R279A |
| Description | N-CHANNEL; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): .3 A; Maximum Drain Current (Abs) (ID): .3 A; Field Effect Transistor Technology: METAL SEMICONDUCTOR; JESD-609 Code: e0; |
| Datasheet | NE650R279A Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Field Effect Transistor Technology: | METAL SEMICONDUCTOR |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (ID): | .3 A |
| Maximum Drain Current (Abs) (ID): | .3 A |
| Sub-Category: | Other Transistors |
| Polarity or Channel Type: | N-CHANNEL |
| Maximum Power Dissipation Ambient: | 2.1 W |
| Terminal Finish: | Tin/Lead (Sn/Pb) |
| JESD-609 Code: | e0 |









