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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | NE850R599A |
| Description | N-CHANNEL; Maximum Drain Current (Abs) (ID): .56 A; Maximum Power Dissipation Ambient: 3 W; Field Effect Transistor Technology: METAL SEMICONDUCTOR; Maximum Drain Current (ID): .56 A; Maximum Operating Temperature: 175 Cel; |
| Datasheet | NE850R599A Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Field Effect Transistor Technology: | METAL SEMICONDUCTOR |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Drain Current (ID): | .56 A |
| Maximum Drain Current (Abs) (ID): | .56 A |
| Sub-Category: | Other Transistors |
| Polarity or Channel Type: | N-CHANNEL |
| Maximum Power Dissipation Ambient: | 3 W |
