Renesas Electronics - NE85619-T1-A

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NE85619-T1-A by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number NE85619-T1-A
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4500 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;
Datasheet NE85619-T1-A Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 4500 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Surface Mount: YES
No. of Terminals: 3
Maximum Power Dissipation (Abs): .15 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 150 Cel
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 50
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 12 V
Additional Features: LOW NOISE, HIGH RELIABILITY
Maximum Collector-Base Capacitance: 1.5 pF
Peak Reflow Temperature (C): NOT SPECIFIED
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