Renesas Electronics - NE85635

NE85635 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number NE85635
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Power Dissipation (Abs): .58 W; Maximum Collector Current (IC): .1 A;
Datasheet NE85635 Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 7000 MHz
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Collector Current (IC): .1 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 4
Maximum Power Dissipation (Abs): .58 W
Terminal Position: QUAD
Package Style (Meter): MICROWAVE
JESD-30 Code: X-CQMW-F4
No. of Elements: 1
Package Shape: UNSPECIFIED
Terminal Form: FLAT
Highest Frequency Band: L BAND
Maximum Operating Temperature: 150 Cel
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 50
JESD-609 Code: e0
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 12 V
Additional Features: LOW NOISE, HIGH RELIABILITY
Maximum Collector-Base Capacitance: 1 pF
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