Renesas Electronics - NE961R500

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NE961R500 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number NE961R500
Description N-CHANNEL; Field Effect Transistor Technology: METAL SEMICONDUCTOR; Maximum Power Dissipation Ambient: 4.2 W; Maximum Drain Current (Abs) (ID): .7 A; Maximum Operating Temperature: 175 Cel; Maximum Drain Current (ID): .7 A;
Datasheet NE961R500 Datasheet
NAME DESCRIPTION
Field Effect Transistor Technology: METAL SEMICONDUCTOR
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (ID): .7 A
Maximum Drain Current (Abs) (ID): .7 A
Sub-Category: Other Transistors
Polarity or Channel Type: N-CHANNEL
Maximum Power Dissipation Ambient: 4.2 W
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