NEM090853P-28-A by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	NEM090853P-28-A
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Terminal Form: FLAT; Maximum Drain Current (Abs) (ID): 10 A;
Datasheet	NEM090853P-28-A Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	.01 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
No. of Terminals:	2
Maximum Power Dissipation (Abs):	250 W
Terminal Position:	DUAL
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PDFM-F2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
Minimum Power Gain (Gp):	18.5 dB
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	65 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	10 A
Peak Reflow Temperature (C):	NOT SPECIFIED

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