Renesas Electronics - NESG2046M33FB-T3-A

  1. Home
  2. Renesas Electronics - NESG2046M33FB-T3-A
NESG2046M33FB-T3-A by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number NESG2046M33FB-T3-A
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 18000 MHz; Maximum Collector Current (IC): .04 A; Terminal Form: FLAT;
Datasheet NESG2046M33FB-T3-A Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 18000 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .04 A
Configuration: SINGLE
Transistor Element Material: SILICON GERMANIUM
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
Terminal Finish: TIN BISMUTH
JESD-609 Code: e6
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 5 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Highest Frequency Band: L BAND
Maximum Collector-Base Capacitance: .4 pF
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MMBTH24-7-F by Diodes Incorporated

MMBTH24-7-F

Diodes Incorporated

Diodes Inc. MMBTH24-7-F is a NPN BJT transistor for RF applications. Features include 400MHz fT, 40V VCEO, and 0.3W Ptot. Ideal for ultra-high frequency amplification in compact SOT package with Gull Wing terminals.
2SC4399-4 by Onsemi

2SC4399-4

Onsemi

RF Small Signal Bipolar Transistors;
934067698235 by NXP Semiconductors

934067698235

NXP Semiconductors

RF Small Signal Bipolar Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Terminal Finish: TIN;
934066851115 by NXP Semiconductors

934066851115

NXP Semiconductors

RF Small Signal Bipolar Transistors;
BSX29 by STMicroelectronics

BSX29

STMicroelectronics

BSX29 by STMicroelectronics is a PNP RF small signal BJT designed for switching applications. It features a max power dissipation of 0.36 W, operates up to 150 °C, and has a nominal transition frequency of 700 MHz. Ideal for compact electronic circuits requiring efficient signal control.
55GN01MA-TL-E by Onsemi

55GN01MA-TL-E

Onsemi

The Onsemi 55GN01MA-TL-E is an NPN RF BJT with a single configuration, suitable for surface mount applications. It offers a max power dissipation of 0.4W, min DC current gain of 100, and nominal transition frequency of 3000MHz. Ideal for high-frequency amplification in electronic circuits.
934067706235 by NXP Semiconductors

934067706235

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10500 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .05 A;
LPT16ED by Sige Semiconductor

LPT16ED

Sige Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .08 A; Transistor Application: AMPLIFIER;
934063142215 by NXP Semiconductors

934063142215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .07 A; No. of Terminals: 3;
BFS17 by NXP Semiconductors

BFS17

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1600 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .025 A;
MCH4017 by Onsemi

MCH4017

Onsemi

The Onsemi MCH4017 is an NPN RF BJT with a max. power dissipation of 0.45W, suitable for UHF applications. With a min. DC current gain of 60 and max. collector-emitter voltage of 12V, it operates at up to 150 °C, making it ideal for high-frequency circuits in small outline packages.
AT-42035G by Broadcom

AT-42035G

Broadcom

AT-42035G by Broadcom is a NPN RF BJT transistor with a max operating temperature of 150°C. It has a transition frequency of 8 GHz and can handle a collector current of 0.08 A, making it suitable for C band amplifier applications in microwave packages.
CPH6003A-TL-E by Onsemi

CPH6003A-TL-E

Onsemi

CPH6003A-TL-E by Onsemi is an NPN RF BJT with a max power dissipation of 0.8W and min hFE of 100. Ideal for applications requiring a single configuration, surface mount capability, and operating temperatures up to 150°C.
934059125115 by NXP Semiconductors

934059125115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .03 A; Transistor Application: SWITCHING;
2N3866 by International Diode

2N3866

International Diode

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .4 A;
2SC5245A-4-TL-E by Onsemi

2SC5245A-4-TL-E

Onsemi

The Onsemi 2SC5245A-4-TL-E is an NPN RF BJT with a max power dissipation of 0.15W, fT of 5000MHz, and hFE min of 60. Ideal for high-frequency applications in surface-mount configurations due to its low collector current and high operating temperature capabilities.
2SA1857T-5 by Onsemi

2SA1857T-5

Onsemi

Onsemi's 2SA1857T-5 is a PNP BJT transistor with VCEsat of 0.3V, hFE of 135, and fT of 750MHz. Ideal for amplifier applications in the very high frequency band due to its small outline package and max operating temperature of 150 °C.
BFP405H6327XTSA1 by Infineon Technologies

BFP405H6327XTSA1

Infineon Technologies

BFP405H6327XTSA1 by Infineon is a NPN RF BJT transistor with 4.5V VCEO, 0.025A IC, and 25000MHz fT. Ideal for L Band applications, it features a small outline package with Gull Wing terminals for surface mount amplification needs.
BFS17W by Vishay Semiconductors

BFS17W

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2400 MHz; Maximum Collector Current (IC): .025 A; Terminal Position: DUAL;
KSC1393O by Onsemi

KSC1393O

Onsemi

KSC1393O by Onsemi is an NPN RF BJT with a single configuration for amplifier applications. It offers a min power gain of 20 dB, operates in the very high frequency band up to 700 MHz, and has a max collector-emitter voltage of 30 V. This transistor comes in a cylindrical package with through-hole terminals and can handle a max power dissipation of 0.25 W at an ambient temperature of 150 °C.