Renesas Electronics - NESG210719-A-YFB

  1. Home
  2. Renesas Electronics - NESG210719-A-YFB
NESG210719-A-YFB by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number NESG210719-A-YFB
Description RF Small Signal Bipolar Transistors;
Datasheet NESG210719-A-YFB Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MMPQ2369R1 by Onsemi

MMPQ2369R1

Onsemi

MMPQ2369R1 by Onsemi is a NPN BJT with 4 elements, ideal for amplifier applications. It features a max fT of 550 MHz, VCE of 15V, and IC of 0.5A. The transistor comes in a small outline package with Gull Wing terminals for surface mount assembly.
BFU550WF by NXP Semiconductors

BFU550WF

NXP Semiconductors

The NXP Semiconductors BFU550WF is an RF BJT transistor with a max fT of 11GHz. It operates in L Band, has a Vce of 12V, and IC of 0.05A. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mounting.
MMBTH10 by Electronic Devices

MMBTH10

Electronic Devices

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): SMALL OUTLINE;
3003 by Microsemi

3003

Microsemi

Microsemi's 3003 is an NPN BJT transistor for RF amplification in S Band applications. With a max operating temp of 200°C, it has a 0.6A collector current and comes in a ceramic-metal package with flat terminals for surface mount assembly.
EC3H02BA by Onsemi

EC3H02BA

Onsemi

The Onsemi EC3H02BA is an NPN RF BJT with a single configuration, suitable for surface mount applications. It features a max power dissipation of 0.1W, min DC current gain of 120, and max operating temp of 150 °C. Ideal for high-frequency circuits up to 5000MHz requiring low collector current at 0.07A.
KST10MTF by Onsemi

KST10MTF

Onsemi

KST10MTF by Onsemi is an NPN RF BJT with a max power dissipation of 0.35W and fT of 650MHz. Ideal for UHF applications, it has a max VCE of 25V and hFE of 60, making it suitable for high-frequency amplification in compact designs. With a small outline package and gull wing terminals, it offers efficient surface-mount integration.
934067699215 by NXP Semiconductors

934067699215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .08 A;
MMBTH81LT1 by Motorola

MMBTH81LT1

Motorola

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 600 MHz; JESD-30 Code: R-PDSO-G3; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
2N4429 by STMicroelectronics

2N4429

STMicroelectronics

2N4429 by STMicroelectronics is an NPN RF BJT designed for amplifier applications, featuring a max power dissipation of 5W and a nominal transition frequency of 700 MHz. It operates in the ultra-high frequency band with a max temp of 200 °C. Its flat, round package ensures efficient mounting.
2SC5501A-4-TR-E by Onsemi

2SC5501A-4-TR-E

Onsemi

RF Small Signal Bipolar Transistors; JESD-609 Code: e6; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN BISMUTH; Peak Reflow Temperature (C): 260;
BFR93A by Siemens

BFR93A

Siemens

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;
BFR96 by Space Power Electronics

BFR96

Space Power Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .075 A; Qualification: Not Qualified;
HFA3127BZ96 by Intersil

HFA3127BZ96

Intersil

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Transistor Application: AMPLIFIER;
JANTX2N2907A by Vpt Components

JANTX2N2907A

Vpt Components

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .6 A; Transistor Element Material: SILICON; Maximum Operating Temperature: 200 Cel;
MMBTH11 by National Semiconductor

MMBTH11

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 660 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;
MPS6507RL by Onsemi

MPS6507RL

Onsemi

MPS6507RL by Onsemi is an NPN RF BJT with 20V VCEO, 2.5pF CBC, and 800MHz fT. Ideal for amplifier applications, it has a max operating temp of 150 °C. Packaged in plastic/epoxy with through-hole terminals, it offers 0.05A IC and TIN LEAD finish.
MPSH10 by Micro Electronics

MPSH10

Micro Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .04 A;
2N2369A by General Diode

2N2369A

General Diode

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .2 A;
MPSH81RL1 by Onsemi

MPSH81RL1

Onsemi

MPSH81RL1 by Onsemi is a PNP RF BJT transistor with 3 terminals. It has a max collector-emitter voltage of 20V, fT of 600MHz, and operates up to 150 °C. Ideal for amplifier applications due to its high transition frequency and low collector-base capacitance.
MSC82100 by STMicroelectronics

MSC82100

STMicroelectronics

STMicroelectronics' MSC82100 is an NPN BJT transistor with a hFE of 15, ideal for amplifier applications in L Band frequencies. With a max operating temp of 200 °C and fT of 1600 MHz, it offers a collector-emitter voltage of 20V and collector current up to 0.2A.