Renesas Electronics - NESG2107M33-T3

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NESG2107M33-T3 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number NESG2107M33-T3
Description NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .13 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 140;
Datasheet NESG2107M33-T3 Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): .1 A
Maximum Power Dissipation (Abs): .13 W
Transistor Element Material: SILICON GERMANIUM
No. of Elements: 1
Sub-Category: BIP RF Small Signal
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 140
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