Renesas Electronics - NESG210833-T1B-A-FB

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NESG210833-T1B-A-FB by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number NESG210833-T1B-A-FB
Description RF Small Signal Bipolar Transistors;
Datasheet NESG210833-T1B-A-FB Datasheet
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BF199 by Onsemi

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BF199 by Onsemi is a NPN BJT transistor for RF applications. With hFE of 40, it operates at up to 150 °C with fT of 750 MHz. Ideal for amplification in very high frequency bands, it has a max IC of 0.1A and VCE of 25V in a cylindrical package.
934067695135 by NXP Semiconductors

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2N2907 by Solid State Devices

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NXP Semiconductors

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Microsemi

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STMicroelectronics

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NXP Semiconductors' BFU520VL is a NPN BJT transistor with 4 terminals, ideal for L Band applications. With a max fT of 10500 MHz and hFE of 60, it operates at temperatures from -40 to 150 °C, making it suitable for high-frequency amplifier circuits in various electronic devices.