Renesas Electronics - NESG3033M14-T3-A

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NESG3033M14-T3-A by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number NESG3033M14-T3-A
Description NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .035 A; No. of Elements: 1;
Datasheet NESG3033M14-T3-A Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .035 A
Configuration: SINGLE
Transistor Element Material: SILICON GERMANIUM
Transistor Application: AMPLIFIER
Sub-Category: BIP RF Small Signal
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 220
Terminal Finish: TIN BISMUTH
JESD-609 Code: e6
No. of Terminals: 4
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .15 W
Maximum Collector-Emitter Voltage: 4.3 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Highest Frequency Band: L BAND
Maximum Operating Temperature: 150 Cel
Maximum Collector-Base Capacitance: .25 pF
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