Renesas Electronics - NESG340033-T1B-YFB-A

  1. Home
  2. Renesas Electronics - NESG340033-T1B-YFB-A
NESG340033-T1B-YFB-A by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number NESG340033-T1B-YFB-A
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Collector Current (IC): .4 A; Package Body Material: PLASTIC/EPOXY;
Datasheet NESG340033-T1B-YFB-A Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 10000 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .4 A
Configuration: SINGLE
Transistor Element Material: SILICON GERMANIUM
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 5.5 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: LOW NOISE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Collector-Base Capacitance: 1.15 pF
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BFX48 by STMicroelectronics

BFX48

STMicroelectronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 550 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .1 A;
CPH6003A-TL-E by Sanyo Semiconductor

CPH6003A-TL-E

Sanyo Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .15 A; Minimum DC Current Gain (hFE): 100;
2N2222 by Swampscott Electronics

2N2222

Swampscott Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
CA3146E by Rochester Electronics

CA3146E

Rochester Electronics

NPN; Configuration: COMPLEX; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .05 A; Transistor Application: AMPLIFIER;
15GN03FA-TL-H by Onsemi

15GN03FA-TL-H

Onsemi

RF Small Signal Bipolar Transistors; JESD-609 Code: e6; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; Terminal Finish: TIN BISMUTH; Moisture Sensitivity Level (MSL): 1;
MMBTH81LT3 by Onsemi

MMBTH81LT3

Onsemi

The Onsemi MMBTH81LT3 is a PNP RF BJT with 600 MHz fT, 20V VCEO, and 0.85pF CCB. Ideal for UHF applications, it features a Gull Wing terminal form in a small outline package. Suitable for high-frequency designs requiring compact size and low capacitance.
SS9018 by Onsemi

SS9018

Onsemi

SS9018 by Onsemi is an NPN RF BJT transistor with a max VCEsat of 0.5V and hFE of 28, ideal for amplifier applications in the very high frequency band up to 1100MHz. With a max IC of 0.05A and Pdiss of 0.4W, it operates at temperatures up to 150 °C in a cylindrical package with through-hole terminals.
BFR181WH6327XTSA1 by Infineon Technologies

BFR181WH6327XTSA1

Infineon Technologies

BFR181WH6327XTSA1 by Infineon is a NPN RF BJT transistor with 3 terminals, suitable for L Band applications. It has a max collector-emitter voltage of 12V, fT of 8000 MHz, and IC of 0.02A. Ideal for amplifier circuits due to its small outline package style and high transition frequency.
BFG425W,115 by NXP Semiconductors

BFG425W,115

NXP Semiconductors

BFG425W,115 by NXP Semiconductors is a RF Small Signal Bipolar Junction Transistor (BJT) with NPN polarity. It is designed for switching applications in the L Band frequency range up to 25 GHz. This surface mount transistor has a max power dissipation of 0.135 W and can handle a max collector current of 0.03 A.
BFY740B01PB4SA1 by Infineon Technologies

BFY740B01PB4SA1

Infineon Technologies

RF Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
SD1169 by STMicroelectronics

SD1169

STMicroelectronics

NPN; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 6 A; Transistor Element Material: SILICON;
MPS5179ZL1 by Onsemi

MPS5179ZL1

Onsemi

MPS5179ZL1 by Onsemi is an NPN RF BJT with a max collector-emitter voltage of 12V and fT of 900MHz. Ideal for amplifier applications, it has a max collector current of 0.05A and a package style of cylindrical PLASTIC/EPOXY.
BFP420H6327 by Infineon Technologies

BFP420H6327

Infineon Technologies

BFP420H6327 by Infineon is a NPN RF BJT transistor with 4 terminals, operating up to 150°C. It has a max fT of 25 GHz and collector-emitter voltage of 4.5V, suitable for X Band amplifier applications in automotive electronics meeting AEC-Q101 standards.
55GN01FA by Onsemi

55GN01FA

Onsemi

55GN01FA by Onsemi is a NPN BJT transistor with 3 terminals, suitable for amplifier applications in the UHF band. It has a max power dissipation of 0.25W, hFE of 100, and fT of 5500MHz. The package is small outline plastic/epoxy with dual terminal position and can operate up to 150 °C.
MRF237 by Motorola

MRF237

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1 A; Transistor Element Material: SILICON;
BFY90 by Microsemi

BFY90

Microsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1300 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;
BFR93AWH6327XTSA1 by Infineon Technologies

BFR93AWH6327XTSA1

Infineon Technologies

BFR93AWH6327XTSA1 by Infineon is a NPN RF BJT transistor with 12V VCEO, 0.09A IC, and 6000MHz fT. Ideal for L Band applications, it's a single configuration amplifier in a small outline package suitable for surface mount technology.
3003 by Microsemi

3003

Microsemi

Microsemi's 3003 is an NPN BJT transistor for RF amplification in S Band applications. With a max operating temp of 200°C, it has a 0.6A collector current and comes in a ceramic-metal package with flat terminals for surface mount assembly.
2N918 by STMicroelectronics

2N918

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;
2N5109 by Baneasa S A

2N5109

Baneasa S A

RF Small Signal Bipolar Transistors; Surface Mount: NO; JESD-30 Code: O-MBCY-W3; JEDEC-95 Code: TO-39; Package Style (Meter): CYLINDRICAL; Package Shape: ROUND;