Renesas Electronics - NP16N04YUG-E2-AY

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NP16N04YUG-E2-AY by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number NP16N04YUG-E2-AY
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 36 W; No. of Terminals: 8; Minimum DS Breakdown Voltage: 40 V;
Datasheet NP16N04YUG-E2-AY Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 16 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: Pure Tin (Sn)
No. of Terminals: 8
Maximum Power Dissipation (Abs): 36 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .025 ohm
Maximum Feedback Capacitance (Crss): 100 pF
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 40 V
Maximum Drain Current (Abs) (ID): 16 A
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