Renesas Electronics - NP75N04YUK-E1-AY

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NP75N04YUK-E1-AY by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number NP75N04YUK-E1-AY
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 138 W; Operating Mode: ENHANCEMENT MODE; Terminal Position: DUAL;
Datasheet NP75N04YUK-E1-AY Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 75 A
Surface Mount: YES
No. of Terminals: 5
Maximum Power Dissipation (Abs): 138 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0033 ohm
Maximum Feedback Capacitance (Crss): 330 pF
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 40 V
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): NOT SPECIFIED
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