Renesas Electronics - NP84N055NLE

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NP84N055NLE by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number NP84N055NLE
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Case Connection: DRAIN; Minimum DS Breakdown Voltage: 55 V; Avalanche Energy Rating (EAS): 302 mJ;
Datasheet NP84N055NLE Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 84 A
Maximum Pulsed Drain Current (IDM): 336 A
Surface Mount: NO
Terminal Finish: TIN LEAD
No. of Terminals: 3
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0094 ohm
Avalanche Energy Rating (EAS): 302 mJ
JEDEC-95 Code: TO-262AA
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 55 V
Qualification: Not Qualified
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