Renesas Electronics - NV4V31SF-A

  1. Home
  2. Renesas Electronics - NV4V31SF-A
NV4V31SF-A by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number NV4V31SF-A
Description LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 6.5 V; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 405;
Datasheet NV4V31SF-A Datasheet
NAME DESCRIPTION
Optoelectronic Type: LASER DIODE
Maximum Forward Current: .2 A
Peak Wavelength (nm): 405
Maximum Operating Temperature: 85 Cel
Sub-Category: Laser Diodes
Maximum Forward Voltage: 6.5 V
Minimum Operating Temperature: -5 Cel
Mounting Feature: THROUGH HOLE MOUNT
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

NX8567SAS401-BC by Renesas Electronics

NX8567SAS401-BC

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Maximum Response Time: .000000000125 s; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1540;
DL-LS1017 by Onsemi

DL-LS1017

Onsemi

DL-LS1017 by Onsemi is a Laser Diode with 0.11A max forward current, peak wavelength of 658nm, and max operating temp of 60 °C. Ideal for applications requiring through hole mounting, it operates b/w -10°C to 60°C and has a max forward voltage of 3.5V.
NX8560SJ597-BC by Renesas Electronics

NX8560SJ597-BC

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2 V; Maximum Forward Current: .15 A; Maximum Response Time: .00000000004 s; Peak Wavelength (nm): 1560; Minimum Operating Temperature: -5 Cel;
NX8566LE287-CC by Renesas Electronics

NX8566LE287-CC

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2 V; Maximum Forward Current: .15 A; Minimum Operating Temperature: -20 Cel; Peak Wavelength (nm): 1529; Maximum Operating Temperature: 70 Cel;
DL-7140-201 by Onsemi

DL-7140-201

Onsemi

DL-7140-201 by Onsemi is a Laser Diode with 0.1A max forward current, 785nm peak wavelength, and -10 to 60 °C operating temp range. Ideal for applications requiring through hole mounting of laser diodes.
STH51002Z by Infineon Technologies

STH51002Z

Infineon Technologies

LASER DIODE; Maximum Threshold Current: 15 mA; Shape: ROUND; No. of Functions: 1; Peak Wavelength (nm): 1280; Nominal Output Power: 5 W;
NX8570SC6053-BA-A by Renesas Electronics

NX8570SC6053-BA-A

Renesas Electronics

LASER DIODE; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1605; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP;
TOLD322BAB by Toshiba

TOLD322BAB

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: 0 Cel; Maximum Operating Temperature: 65 Cel; Maximum Forward Voltage: 1.5 V; Semiconductor Material: InGaAs;
TOLD321CBC by Toshiba

TOLD321CBC

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1310; Maximum Operating Temperature: 70 Cel;
DL-4147-162 by Onsemi

DL-4147-162

Onsemi

DL-4147-162 by Onsemi is a 1mm LASER DIODE with peak wavelength of 650nm. It has max threshold current of 50mA and nominal output power of 12W. Ideal for applications requiring precise laser emission in compact spaces at temperatures ranging from -10 to 70 °C.
NDL7740PA by Renesas Electronics

NDL7740PA

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 65 Cel; Maximum Forward Voltage: 1.5 V; Peak Wavelength (nm): 1550;
SFH484501 by Infineon Technologies

SFH484501

Infineon Technologies

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Forward Current: 11 A; Nominal Output Power: 5000 W; Minimum Operating Temperature: 5 Cel; Maximum Operating Temperature: 60 Cel;
TOLD370 by Toshiba

TOLD370

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .0000000003 s; Maximum Forward Voltage: 1.5 V; Peak Wavelength (nm): 1550; Maximum Operating Temperature: 65 Cel;
CQF25A/D13 by NXP Semiconductors

CQF25A/D13

NXP Semiconductors

CQF25A/D13 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 820 nm and a max forward current of 0.15 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks.
NX8570SC433-BA-AZ by Renesas Electronics

NX8570SC433-BA-AZ

Renesas Electronics

LASER DIODE; Peak Wavelength (nm): 1543; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel;
NX8562LB295-CA by Renesas Electronics

NX8562LB295-CA

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Forward Voltage: 1.5 V; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -20 Cel;
NV4V31MF-A-KV by Renesas Electronics

NV4V31MF-A-KV

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Shape: ROUND; Maximum Threshold Current: 55 mA; Configuration: SINGLE; No. of Functions: 1;
TOLD310 by Toshiba

TOLD310

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Maximum Response Time: .0000000003 s; Minimum Operating Temperature: -10 Cel; Maximum Forward Voltage: 1.5 V;
SDL7032-201 by Onsemi

SDL7032-201

Onsemi

SDL7032-201 by Onsemi is an 830nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications in optoelectronics.
NX8571SC541-BA-A by Renesas Electronics

NX8571SC541-BA-A

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1554;