Renesas Electronics - NX6342EP

  1. Home
  2. Renesas Electronics - NX6342EP
NX6342EP by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number NX6342EP
Description LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Size: 2 mm; Maximum Response Time: .00000000005 s; Maximum Forward Current: .12 A; Shape: ROUND;
Datasheet NX6342EP Datasheet
NAME DESCRIPTION
Shape: ROUND
Configuration: SINGLE WITH BUILT-IN PHOTO DIODE
Size: 2 mm
Minimum Operating Temperature: -5 Cel
Mounting Feature: THROUGH HOLE MOUNT
No. of Functions: 1
Optoelectronic Type: LASER DIODE
Nominal Output Power: 15 W
Maximum Forward Current: .12 A
Peak Wavelength (nm): 1330
Maximum Threshold Current: 30 mA
Maximum Response Time: .00000000005 s
Maximum Operating Temperature: 85 Cel
Semiconductor Material: AlGaInAs
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

CQF25C/D43 by NXP Semiconductors

CQF25C/D43

NXP Semiconductors

CQF25C/D43 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 875 nm and a max forward current of 0.15 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks.
SDL3030 by Onsemi

SDL3030

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Peak Wavelength (nm): 790; Semiconductor Material: GaAlAs;
TOLD323ABB by Toshiba

TOLD323ABB

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Forward Voltage: 2 V; Maximum Response Time: .000000001 s; Maximum Operating Temperature: 70 Cel;
NX8570SC766-BA by Renesas Electronics

NX8570SC766-BA

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1577; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2.5 V;
NX8570SC687-BA-A by Renesas Electronics

NX8570SC687-BA-A

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .3 A; Minimum Operating Temperature: -5 Cel; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1568;
TOLD320CCB by Toshiba

TOLD320CCB

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Forward Voltage: 1.5 V; Peak Wavelength (nm): 1310; Minimum Operating Temperature: -30 Cel;
NX8563LF469-BA-A by Renesas Electronics

NX8563LF469-BA-A

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -20 Cel; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 1.5 V; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1546;
TOLD9421(S) by Toshiba

TOLD9421(S)

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: GaAlInP; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 650;
STH61004Z by Infineon Technologies

STH61004Z

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Peak Wavelength (nm): 1300; Maximum Forward Current: .12 A; Maximum Operating Temperature: 85 Cel;
TOLD9200(S) by Toshiba

TOLD9200(S)

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 670; Maximum Operating Temperature: 50 Cel;
NX8563LF795-BA-AZ by Renesas Electronics

NX8563LF795-BA-AZ

Renesas Electronics

LASER DIODE; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -20 Cel; Peak Wavelength (nm): 1579;
STL81004A by Infineon Technologies

STL81004A

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Spectral Bandwidth: 5 m; Peak Wavelength (nm): 1330; Maximum Forward Current: .12 A; Maximum Operating Temperature: 85 Cel;
NX8571SC501-BA by Renesas Electronics

NX8571SC501-BA

Renesas Electronics

LASER DIODE; Peak Wavelength (nm): 1550; Maximum Forward Voltage: 2.5 V; Minimum Operating Temperature: -5 Cel; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A;
TOLD300E by Toshiba

TOLD300E

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .0000000003 s; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1310; Maximum Forward Voltage: 1.5 V;
CQF25A/D52 by NXP Semiconductors

CQF25A/D52

NXP Semiconductors

CQF25A/D52 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 820 nm and a max forward current of 0.15 A. It operates efficiently b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks in communication systems.
SPLBS94 by Infineon Technologies

SPLBS94

Infineon Technologies

LASER DIODE; Semiconductor Material: InGaAs/GaAs; Spectral Bandwidth: 4 m; Peak Wavelength (nm): 940;
NX8571SC358-BA-AZ by Renesas Electronics

NX8571SC358-BA-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP;
SFH487401 by Infineon Technologies

SFH487401

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Spectral Bandwidth: 2 m; Shape: ROUND; Nominal Output Power: 1000 W;
NX8566LE770-BC by Renesas Electronics

NX8566LE770-BC

Renesas Electronics

Laser Diodes;
TOLD320CAC by Toshiba

TOLD320CAC

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Semiconductor Material: InGaAs; Minimum Operating Temperature: 0 Cel; Maximum Forward Voltage: 1.5 V;