Renesas Electronics - NX6353EP31-AZ

NX6353EP31-AZ by Renesas Electronics

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	NX6353EP31-AZ
Description	LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2 V; Maximum Forward Current: .12 A; Semiconductor Material: AlGaInAs; Peak Wavelength (nm): 1310;
Datasheet	NX6353EP31-AZ Datasheet

NX6353EP31-AZ Technical Details

NAME	DESCRIPTION
Optoelectronic Type:	LASER DIODE
Maximum Forward Current:	.12 A
Peak Wavelength (nm):	1310
Maximum Response Time:	.00000000005 s
Maximum Operating Temperature:	85 Cel
Semiconductor Material:	AlGaInAs
Sub-Category:	Laser Diodes
Maximum Forward Voltage:	2 V
Minimum Operating Temperature:	-40 Cel
Mounting Feature:	THROUGH HOLE MOUNT

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