Renesas Electronics - NX6508GK59-AZ

  1. Home
  2. Renesas Electronics - NX6508GK59-AZ
NX6508GK59-AZ by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number NX6508GK59-AZ
Description LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -20 Cel; Maximum Response Time: .0000000001 s; Maximum Forward Current: .15 A; Maximum Operating Temperature: 85 Cel;
Datasheet NX6508GK59-AZ Datasheet
NAME DESCRIPTION
Optoelectronic Type: LASER DIODE
Maximum Forward Current: .15 A
Peak Wavelength (nm): 1590
Maximum Response Time: .0000000001 s
Maximum Operating Temperature: 85 Cel
Semiconductor Material: InGaAsP
Sub-Category: Laser Diodes
Maximum Forward Voltage: 1.6 V
Minimum Operating Temperature: -20 Cel
Mounting Feature: THROUGH HOLE MOUNT
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

DL-LS1036 by Onsemi

DL-LS1036

Onsemi

DL-LS1036 by Onsemi is a Laser Diode with 0.11A max forward current, peak wavelength of 635nm, and 2.7V max forward voltage. Ideal for applications requiring laser diodes in temperatures ranging from -10 °C to 50°C with through hole mounting feature.
TOLD320AAC by Toshiba

TOLD320AAC

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 65 Cel; Semiconductor Material: InGaAs; Minimum Operating Temperature: 0 Cel; Peak Wavelength (nm): 1310;
NDL7740PA by Renesas Electronics

NDL7740PA

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 65 Cel; Maximum Forward Voltage: 1.5 V; Peak Wavelength (nm): 1550;
SPLPL90_3 by Osram Opto Semiconductors

SPLPL90_3

Osram Opto Semiconductors

Osram Opto Semiconductors' SPLPL90_3 is a SINGLE laser diode with 4.9mm size, peak wavelength of 905nm, and max forward current of 40A. It operates b/w -40 to 85°C and has a nominal output power of 75kW. Ideal for applications requiring high-power lasers in through-hole mounting configurations.
NX8571SC728-BA by Renesas Electronics

NX8571SC728-BA

Renesas Electronics

LASER DIODE; Maximum Forward Current: .3 A; Minimum Operating Temperature: -5 Cel; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2.5 V;
NX8567SAS553-BC by Renesas Electronics

NX8567SAS553-BC

Renesas Electronics

LASER DIODE; Maximum Forward Current: .15 A; Maximum Response Time: .000000000125 s; Peak Wavelength (nm): 1555; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: -5 Cel;
CQF25B/D12 by NXP Semiconductors

CQF25B/D12

NXP Semiconductors

CQF25B/D12 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 850 nm and a max forward current of 0.15 A. It operates efficiently b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for data communication systems.
NX8563LAS493-CC-A by Renesas Electronics

NX8563LAS493-CC-A

Renesas Electronics

LASER DIODE; Peak Wavelength (nm): 1549; Minimum Operating Temperature: -20 Cel; Maximum Response Time: .00000000012 s; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP;
NX8570SC984D-BA by Renesas Electronics

NX8570SC984D-BA

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1598; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V;
SDL5140-201 by Onsemi

SDL5140-201

Onsemi

SDL5140-201 by Onsemi is an 800nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications in optoelectronics.
CQF25B/D43 by NXP Semiconductors

CQF25B/D43

NXP Semiconductors

CQF25B/D43 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 850 nm and a max forward current of 0.15 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for data communication systems.
TOLD322CCC by Toshiba

TOLD322CCC

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 80 Cel; Peak Wavelength (nm): 1310; Maximum Forward Current: .15 A; Minimum Operating Temperature: -30 Cel;
NX8560SJ425-CC by Renesas Electronics

NX8560SJ425-CC

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1542; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: -5 Cel; Maximum Response Time: .00000000004 s;
CQF25C/D41 by NXP Semiconductors

CQF25C/D41

NXP Semiconductors

CQF25C/D41 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 875 nm and a max forward current of 0.15 A. It operates efficiently b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks in communication systems.
V105Q121A-940 by Osram Opto Semiconductors

V105Q121A-940

Osram Opto Semiconductors

Osram Opto Semiconductors' V105Q121A-940 is a 940nm laser diode with peak power of 3000W and threshold current of 700mA. Ideal for surface mount applications, it operates b/w -20°C to 85°C temperatures.
SDL-LS30 by Onsemi

SDL-LS30

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 60 Cel; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 685;
SDL5030-101 by Onsemi

SDL5030-101

Onsemi

SDL5030-101 by Onsemi is a GaAlAs LASER DIODE with peak wavelength of 790nm. It operates b/w -10 °C to 50°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in optoelectronics and telecommunications.
NX8570SC409D-BA by Renesas Electronics

NX8570SC409D-BA

Renesas Electronics

LASER DIODE; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1541;
TOLD370 by Toshiba

TOLD370

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .0000000003 s; Maximum Forward Voltage: 1.5 V; Peak Wavelength (nm): 1550; Maximum Operating Temperature: 65 Cel;
TOLD323BBA by Toshiba

TOLD323BBA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAs; Maximum Forward Voltage: 2 V; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -10 Cel;